Abstract: In this paper, for the first time, we suggest a unique complementary bipolar process which is using the 1st base poly-Si in collector interface, and controlling base poly-Si over-etching in ...

Abstract: The fabrication, device profile, and electrical characteristics of an advanced bipolar transistor with an LDD-like self-aligned lateral profile are discussed. An ion-implanted extrinsic base ...

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This article describes poly (benzyl ethers) that depolymerize from head-to-tail when an end-cap on the terminus of the polymer is cleaved from the polymer through a specific activity-based detection ...